? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 3.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 3.8 v t j = 125 c 3.0 v igbt lightspeed series symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g ds98632b(01/04) features ? international standard packages jedec to-220ab and to-263aa ? low switching losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) v ces =1200 v i c25 = 30 a v ce(sat) = 3.8 v t fi(typ) = 115 ns ixga 15n120c ixgp 15n120c
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 12 15 s pulse test, t 300 s, duty cycle 2 % c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 95 pf c res 38 pf q g 86 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 26 nc t d(on) 25 ns t ri 15 ns t d(off) 150 200 ns t fi 115 190 ns e off 1.05 1.6 mj t d(on) 25 ns t ri 18 ns e on 0.60 mj t d(off) 220 ns t fi 250 ns e off 2.1 mj r thjc 0.65 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixga 15n120c ixgp 15n120c min. recommended footprint (dimensions in inches and mm)
? 2004 ixys all rights reserved ixga 15n120c ixgp 15n120c fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 0 3 6 9 12 15 18 21 24 27 30 v c e - volts i c - amperes v ge = 15v 5v 7v 9v 11v 13v fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 11.522.533.544.55 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 11.522.533.544.55 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 15a i c = 7.5a v ge = 15v i c = 30a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2.6 3 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6 7 7.4 4 5 6 7 8 9 10 11 12 13 14 15 v g e - volts v c e - volts t j = 25oc i c = 30a 15a 7.5a fig. 6. input adm ittance 0 5 10 15 20 25 30 35 40 45 50 3.544.555.566.577.5 v g e - volts i c - amperes t j = 125oc 25oc t j = -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixga 15n120c ixgp 15n120c fig. 7. transconductance 0 3 6 9 12 15 18 21 24 0 5 10 15 20 25 30 35 40 45 50 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 1 2 3 4 5 6 7 8 10 20 30 40 50 60 70 80 90 100 r g - ohms e o f f - millijoules i c = 7.5a t j = 125oc v ge = 15v v ce = 960v i c = 15a i c = 30a fig. 9. dependence of turn-off en e r g y on i c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 6 9 12 15 18 21 24 27 30 i c - amperes e o f f - millijoules r g = 10 ? v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 30a r g = 10 ? v ge = 15v v ce = 960v i c = 15a i c = 7.5a fig. 11. dependence of turn-off sw itching tim e on r g 100 1000 10 20 30 40 50 60 70 80 90 r g - ohms switching time - nanoseconds i c = 15a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 960v i c = 7.5a i c = 30 a 300 600 fig. 12. dependence of turn-off sw itching tim e on i c 100 150 200 250 300 350 6 9 12 15 18 21 24 27 30 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 10 ? v ge = 15v v ce = 960v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved fig. 15. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v g e - volts v ce = 600v i c = 15a i g = 10ma fig. 16. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 7.5a 15a 30a t d( off) t fi - - - - - - r g = 10 ? v ge = 15v v ce = 960v i c = 30a 15a 7.5a fig. 14. reverse-bias safe operating area 0 10 20 30 40 50 60 70 100 300 500 700 900 1100 1300 q g - nanocoulombs v g e - volts t j = 125 o c r g = 10 ? dv/dt < 10v/ns fig. 17. maximum transient thermal resistance 0.1 1 1 10 100 1000 pulse width - milliseconds r (th)jc - oc/w 0.6 ixga 15n120c ixgp 15n120c
|
